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Diodes Incorporated 2N7002TC
  • Diodes Incorporated 2N7002TC

2N7002TC

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Manufacturer:Diodes Incorporated
MOSFET N-CH 60V 0.115A SOT23-3
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Specifications
Power Dissipation (Max)330mW (Ta)
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs--
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Supplier Device PackageSOT-23-3
FET TypeN-Channel
FET Feature--
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60V
Vgs(th) (Max) @ Id2.5V @ 250µA
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs7.5Ohm @ 500mA, 10V
TechnologyMOSFET (Metal Oxide)

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