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Diodes Incorporated 2N7002TC
  • Diodes Incorporated 2N7002TC
Specifications
Power Dissipation (Max) 330mW (Ta)
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs --
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Supplier Device Package SOT-23-3
FET Type N-Channel
FET Feature --
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package / Case TO-236-3, SC-59, SOT-23-3
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 60V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Technology MOSFET (Metal Oxide)

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