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ON Semiconductor FGB30N6S2T
  • ON Semiconductor FGB30N6S2T

FGB30N6S2T

Manufacturer: ON Semiconductor
IGBT 600V 45A 167W TO263AB
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Specifications
Td (on/off) @ 25°C 6ns/40ns
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge 23nC
Test Condition 390V, 12A, 10Ohm, 15V
Input Type Standard
Supplier Device Package TO-263AB
IGBT Type --
Reverse Recovery Time (trr) --
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max) 45A
Switching Energy 55µJ (on), 110µJ (off)
Power - Max 167W
Voltage - Collector Emitter Breakdown (Max) 600V
Mounting Type Surface Mount
Current - Collector Pulsed (Icm) 108A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A

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