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ON Semiconductor FGB30N6S2T
  • ON Semiconductor FGB30N6S2T

FGB30N6S2T

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Manufacturer:ON Semiconductor
IGBT 600V 45A 167W TO263AB
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Specifications
Td (on/off) @ 25°C6ns/40ns
Operating Temperature-55°C ~ 150°C (TJ)
Gate Charge23nC
Test Condition390V, 12A, 10Ohm, 15V
Input TypeStandard
Supplier Device PackageTO-263AB
IGBT Type--
Reverse Recovery Time (trr)--
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max)45A
Switching Energy55µJ (on), 110µJ (off)
Power - Max167W
Voltage - Collector Emitter Breakdown (Max)600V
Mounting TypeSurface Mount
Current - Collector Pulsed (Icm)108A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A

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