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ON Semiconductor FGB40N6S2T
  • ON Semiconductor FGB40N6S2T

FGB40N6S2T

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Manufacturer:ON Semiconductor
IGBT 600V 75A 290W TO263AB
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Specifications
Td (on/off) @ 25°C8ns/35ns
Operating Temperature-55°C ~ 150°C (TJ)
Gate Charge35nC
Test Condition390V, 20A, 3Ohm, 15V
Input TypeStandard
Supplier Device PackageTO-263AB
IGBT Type--
Reverse Recovery Time (trr)--
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max)75A
Switching Energy115µJ (on), 195µJ (off)
Power - Max290W
Voltage - Collector Emitter Breakdown (Max)600V
Mounting TypeSurface Mount
Current - Collector Pulsed (Icm)180A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A

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