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Rohm Semiconductor QS8M12TCR
  • Rohm Semiconductor QS8M12TCR
StockDelivery timeStockMOQPacking
1... 3-4 week0 pcs.1 pcs.Tape & Reel (TR)Buy one click
Specifications
Current - Continuous Drain (Id) @ 25°C4A
Operating Temperature150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs3.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 10V
Supplier Device PackageTSMT8
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Package / Case8-SMD, Flat Lead
Power - Max1.5W
Drain to Source Voltage (Vdss)30V
Vgs(th) (Max) @ Id2.5V @ 1mA
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs42mOhm @ 4A, 10V

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