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Toshiba Semiconductor and Storage RN1908FE(TE85L,F)
  • Toshiba Semiconductor and Storage RN1908FE(TE85L,F)

RN1908FE(TE85L,F)

Category:
TRANS 2NPN PREBIAS 0.1W ES6
Last sale price
Price:

from 4000 pcs. - $0.09393

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StockDelivery timeStockMOQPacking
1... 3-4 week3945 pcs.4000 pcs.Tape & Reel (TR)Buy one click
Specifications
Frequency - Transition250MHz
Resistor - Base (R1)22kOhms
Current - Collector Cutoff (Max)100nA (ICBO)
Supplier Device PackageES6
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Package / CaseSOT-563, SOT-666
Current - Collector (Ic) (Max)100mA
Resistor - Emitter Base (R2)47kOhms
Power - Max100mW
Voltage - Collector Emitter Breakdown (Max)50V
Mounting TypeSurface Mount
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Transistor Type2 NPN - Pre-Biased (Dual)

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