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Toshiba Semiconductor and Storage RN2910FE,LF(CT
  • Toshiba Semiconductor and Storage RN2910FE,LF(CT
StockDelivery timeStockMOQPacking
1... 3-4 week4000 pcs.4000 pcs.Tape & Reel (TR)Buy one click
Specifications
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Current - Collector Cutoff (Max)100nA (ICBO)
Supplier Device PackageES6
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Package / CaseSOT-563, SOT-666
Current - Collector (Ic) (Max)100mA
Resistor - Emitter Base (R2)--
Power - Max100mW
Voltage - Collector Emitter Breakdown (Max)50V
Mounting TypeSurface Mount
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Transistor Type2 PNP - Pre-Biased (Dual)

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