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Toshiba Semiconductor and Storage RN2910FE,LF(CT
  • Toshiba Semiconductor and Storage RN2910FE,LF(CT

RN2910FE,LF(CT

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Price:

from 4000 pcs. - $0.07110

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Stock Delivery time Stock MOQ Packing
1000... 3-4 week 4000 pcs. 4000 pcs. Tape & Reel (TR) Buy one click
Specifications
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7kOhms
Current - Collector Cutoff (Max) 100nA (ICBO)
Supplier Device Package ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Package / Case SOT-563, SOT-666
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) --
Power - Max 100mW
Voltage - Collector Emitter Breakdown (Max) 50V
Mounting Type Surface Mount
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)

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