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Toshiba Semiconductor and Storage RN4988(T5L,F,T)
  • Toshiba Semiconductor and Storage RN4988(T5L,F,T)

RN4988(T5L,F,T)

Category:
TRANS NPN/PNP PREBIAS 0.2W US6
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Specifications
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)22kOhms
Current - Collector Cutoff (Max)100µA (ICBO)
Supplier Device PackageUS6
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Package / Case6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max)100mA
Resistor - Emitter Base (R2)47kOhms
Power - Max200mW
Voltage - Collector Emitter Breakdown (Max)50V
Mounting TypeSurface Mount
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)

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