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Toshiba Semiconductor and Storage RN4988(T5L,F,T)
  • Toshiba Semiconductor and Storage RN4988(T5L,F,T)
Specifications
Frequency - Transition 250MHz, 200MHz
Resistor - Base (R1) 22kOhms
Current - Collector Cutoff (Max) 100µA (ICBO)
Supplier Device Package US6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Package / Case 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) 47kOhms
Power - Max 200mW
Voltage - Collector Emitter Breakdown (Max) 50V
Mounting Type Surface Mount
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)

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