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Rohm Semiconductor TT8U2TCR
  • Rohm Semiconductor TT8U2TCR
StockDelivery timeStockMOQPacking
1... 3-4 week0 pcs.1 pcs.Tape & Reel (TR)Buy one click
Specifications
Power Dissipation (Max)1.25W (Ta)
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Operating Temperature150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 10V
Supplier Device Package8-TSST
FET TypeP-Channel
FET FeatureSchottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Package / Case8-SMD, Flat Lead
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20V
Vgs(th) (Max) @ Id1V @ 1mA
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs105mOhm @ 2.4A, 4.5V
TechnologyMOSFET (Metal Oxide)

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