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Rohm Semiconductor TT8U2TCR
  • Rohm Semiconductor TT8U2TCR

TT8U2TCR

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from 3000 pcs. - $0.21855

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Stock Delivery time Stock MOQ Packing
1000... 3-4 week 0 pcs. 3000 pcs. Tape & Reel (TR) Buy one click
Specifications
Power Dissipation (Max) 1.25W (Ta)
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Operating Temperature 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Supplier Device Package 8-TSST
FET Type P-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package / Case 8-SMD, Flat Lead
Vgs (Max) ±10V
Drain to Source Voltage (Vdss) 20V
Vgs(th) (Max) @ Id 1V @ 1mA
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 105mOhm @ 2.4A, 4.5V
Technology MOSFET (Metal Oxide)

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